PART |
Description |
Maker |
1214-700P |
Pulsed Power L-Band (Si)
|
Microsemi
|
HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|
AN561 |
WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS
|
SGS Thomson Microelectronics
|
RFHA1027 |
500W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
MAPG-S22729-350L00 MAPG-002729-350L00 |
S-Band 350 W Radar Pulsed Power GaN Pallet
|
M/A-COM Technology Solu...
|
HVV1012-100 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Applications L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications
|
HVVi Semiconductors, Inc.
|
MAPR-001011-850S00 |
L BAND, Si, NPN, RF POWER TRANSISTOR ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10μs Pulse, 1% Duty Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10楼矛s Pulse, 1% Duty
|
M/A-COM Technology Solutions, Inc.
|
HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
HVV0912-150 HVV0912-150-EK |
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10レs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
MDS800 |
RF Power Transistors: AVIONICS MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology Microsemi, Corp.
|
RFHA1023A |
250W GaN WIDE-BAND PULSED
|
RF Micro Devices
|